LTEC Corporation presents at the Industry Session on Wednesday, March 7th.

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”Modeling Thermal Impedance of GaN and SiC Power Transistors　Under Short Circuit Conditions”

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We propose methodology to create a more accurate thermal model based on data obtained

from physical construction analysis of commercially available GaN and SiC devices. The new

short-circuit thermal transient model obtained in this manner yields a more precise estimate

of the peak junction temperature than what’s predicted by most datasheets.

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At our

Exhibitor Seminar

you will have the opportunity to learn about ways to identify wide bandgap power device technology trends through benchmarking and deep analysis.

Please plan to attend and come to visit us at Exhibit Booth 305.