ANALYSIS REPORT THE WOLFSPEED C3M0065090D THIRD GENERATION SiC POWER MOS FET

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・WOLFSPEED C3M0065090D THIRD GENERATION SiC POWER MOS FET

This 114 page report has two parts: a detailed structure analysis section including process-flow section reconstructed based upon associated Cree patents, listed in the 2nd half of the report.
Device features
- Maximum operating voltage: 900V, rated DC Drain current ID @25℃ : 36A
- Very low specific On-resistance, RON x A= 423mΩ x mm2

※reference data : Si SJMOS C7 RON x A = ~1000mΩ x mm2.


This report reveals the device structure, materials and technology that resulted in such a significant reduction of its on-resistance