IEEE 2021 Power Electronics Magazine

June 24, 2021

LTEC Corporation published a technical article in the June issue of the IEEE Power Electronics Magazine


The technical article entitled “Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis,” authored by LTEC Corporation, was published in the June issue of the IEEE Power Electronics Magazine.

Short-Circuit (SC) capability/robustness is one of the most stringent requirements for using SiC power MOSFETs in EV motor drive inverters. Nevertheless, there is a lack of SC robustness manufacturers’ specifications, evaluation data, and even in the tools (e.g., thermal impedance Zth under SC conditions) for assessing the SC margin during the circuit design stage.

Using deep structural and physical analysis, and exhaustive SC tests and measurements we examined state-of-the-art, mass-produced 1200 V-rated SiC power transistors of leading manufacturers (Wolfspeed, ROHM, Infineon, ON Semiconductor, STMicroelectronics, Microsemi) and summarize their SC limitations (SC Withstand Time, Critical Energy-to-Failure). Furthermore, comparing the SC robustness of several SiC process generations, the technological trends and effect of down scaling are highlighted.